Published December 31, 1981 | Version v1
Journal article

An experimental study of the 1800 backscattering yield enhancement

  • 1. Atomic Energy of Canada Ltd., Chalk River, Ontario. Solid State Science Branch

Description

A large enhancement in the yields of MeV 4He ions backscattered near 1800 from amorphous and polycrystalline materials was reported by Pronko et al. and subsequently interpreted in terms of correlated scattering between the incoming and outgoing trajectories. We have developed a simple magnetic deflection system which detects all ions backscattered within a small (approx. equal to 0.040) angular cone centered at exactly 1800 to the incident beam direction. Using this system, we have investigated the enhancement in scattering yield from several thick amorphous (or polycrystalline) targets and also from Bi atoms implanted at various energies (i.e. depths) into C and Si targets. The maximum in the observed enhancement factor is almost independent of target material, provided the 1800 collision involves a heavy atom for which the kinetic backscattered energy factor is close to unity. In the Bi-implanted targets, the decrease in enhancement factor at larger is observed to scale well with x/E0 and is essentially independent of the host. (orig.)

Additional details

Publishing Information

Journal Title
Nucl. Instrum. Methods Phys. Res.
Journal Volume
191
Journal Issue
1-3
Series
Nucl. Instrum. Methods Phys. Res.
Journal Page Range
527-531
ISSN
0029-554X

Conference

Title
5. international conference on ion beam analysis.
Dates
16 - 20 Feb 1981.
Place
Sydney, Australia.

INIS

Country of Publication
Netherlands
Country of Input or Organization
Netherlands
INIS RN
13681602
Subject category
S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
Resource subtype / Literary indicator
Conference, Numerical Data
Descriptors DEI
AMORPHOUS STATE; BACKSCATTERING; BISMUTH; CARBON; DEPTH; EXPERIMENTAL DATA; HELIUM IONS; ION IMPLANTATION; ION SCATTERING ANALYSIS; POLYCRYSTALS; RANGE; SILICON; TARGETS
Descriptors DEC
CHARGED PARTICLES; CHEMICAL ANALYSIS; CRYSTALS; DATA; DIMENSIONS; ELEMENTS; INFORMATION; IONS; METALS; NONDESTRUCTIVE ANALYSIS; NONMETALS; NUMERICAL DATA; SCATTERING; SEMIMETALS