Published 1993
| Version v1
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Enhanced relaxation of strained GexSi1-x layers induced by Co/GexSi1-x thermal reaction
- 1. Australian National Univ., Canberra, ACT (Australia)
- 2. National Research Council of Canada, Ottawa, ON (Canada)
Description
Enhanced relaxation of strained GexSilx layers during the formation of CoSi2 by Co/GexSi1-x thermal reaction has been observed. Raman spectroscopy and transmission electron microscopy were used to monitor the extent of relaxation. Possible mechanisms responsible for the enhanced relaxation, including metal-induced dislocation nucleation, chemical and/or structural inhomogeneities at the reacted layer/GexSi1x interface and point defect injection due to silicide formation will be discussed. Also, methodologies for inhibiting relaxation will be presented. 11 refs., 1 fig
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Additional details
Publishing Information
- Imprint Place
- Lucas Heights (Australia)
- Imprint Title
- Proceedings of the 8. Australian conference on nuclear techniques of analysis
- Imprint Pagination
- 194 p.
- Journal Page Range
- p. 92-94.
- Report number
- INIS-mf--15527
Conference
- Title
- 8. Australian conference on nuclear techniques of analysis.
- Dates
- 17-19 Nov 1993.
- Place
- Lucas Heights (Australia).
INIS
- Country of Publication
- Australia
- Country of Input or Organization
- Australia
- INIS RN
- 28024820
- Subject category
- S36: MATERIALS SCIENCE; S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
- Resource subtype / Literary indicator
- Conference, Numerical Data
- Descriptors DEI
- ANNEALING; CHEMICAL REACTION KINETICS; COBALT SILICIDES; CRYSTAL GROWTH; EPITAXY; EXPERIMENTAL DATA; GERMANIUM SILICIDES; NUCLEATION; POINT DEFECTS; RAMAN SPECTRA; RELAXATION; STRUCTURAL CHEMICAL ANALYSIS; TEMPERATURE DEPENDENCE
- Descriptors DEC
- COBALT COMPOUNDS; CRYSTAL DEFECTS; CRYSTAL GROWTH METHODS; CRYSTAL STRUCTURE; DATA; GERMANIUM COMPOUNDS; HEAT TREATMENTS; INFORMATION; KINETICS; NUMERICAL DATA; REACTION KINETICS; SILICIDES; SILICON COMPOUNDS; SPECTRA; TRANSITION ELEMENT COMPOUNDS