Published April 3, 1992 | Version v1
Patent Metadata-only

Semiconductor for microelectronic components with a high resistance against ionizing radiations

Creators

Description

The active layer is placed on the surface of a dielectric, placed itself on a N or P semiconductor highly doped to obtain protection against ionizing radiation, especially high energy ions from cosmic radiation

Availability note (English)

Available from Institut National de la Propriete Industrielle, Paris (France).

Additional details

Additional titles

Original title (French)
Semi-conducteurs pour composants microelectroniques a haute resistance contre les radiations ionisantes

Publishing Information

Imprint Pagination
9 p.
IPC:
Int. Cl. H01l23/552.
IPC
Int. Cl. H01l23/552.
Patent number
FR patent document 2667442/A/

INIS

Country of Publication
France
Country of Input or Organization
France
INIS RN
24002678
Subject category
S46: INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND TECHNOLOGY;
Resource subtype / Literary indicator
Non-conventional Literature
Descriptors DEI
RADIATION HARDENING; SEMICONDUCTOR DEVICES; SPECIFICATIONS
Descriptors DEC
HARDENING; PHYSICAL RADIATION EFFECTS; RADIATION EFFECTS

Optional Information

Secondary number(s)
FR patent application 8913839.