Published June 2009
| Version v1
Journal article
High-performance evanescently-coupled uni-traveling-carrier photodiodes
Creators
- 1. Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083 (China)
Description
A new evanescently-coupled uni-traveling-carrier photodiode (EC-UTC PD) based on a multimode diluted waveguide (MDW) structure is fabricated, analysed and characterized. Optical and electrical characteristics of the device are investigated. The excellent characteristics are demonstrated such as a responsivity of 0.36 A/W, a bandwidth of 11.5 GHz and a small-signal 1-dB compression current greater than 18 mA at 10 GHz. The saturation current is significantly improved compared with those of similar evanescently-coupled pin photodiodes. The radio frequency (RF) bandwidth can be further improved by eliminating RF losses induced by the cables, the probe and the bias tee between the photodiode and the spectrum analyzer
Availability note (English)
Available from http://dx.doi.org/10.1088/1674-1056/18/6/046Additional details
Identifiers
Publishing Information
- Journal Title
- Chinese Physics. B
- Journal Volume
- 18
- Journal Issue
- 6
- Journal Page Range
- p. 2393-2397
- ISSN
- 1674-1056
INIS
- Country of Publication
- China
- Country of Input or Organization
- International Atomic Energy Agency (IAEA)
- INIS RN
- 44123846
- Subject category
- S71: CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS;
- Descriptors DEI
- CHARGE CARRIERS; COMPARATIVE EVALUATIONS; ELECTRIC CONDUCTIVITY; ENERGY LOSSES; GHZ RANGE; OPTICAL PROPERTIES; PERFORMANCE; PHOTODIODES; RADIOWAVE RADIATION; WAVEGUIDES
- Descriptors DEC
- ELECTRICAL PROPERTIES; ELECTROMAGNETIC RADIATION; EVALUATION; FREQUENCY RANGE; LOSSES; PHYSICAL PROPERTIES; RADIATIONS; SEMICONDUCTOR DEVICES; SEMICONDUCTOR DIODES