Published June 2009 | Version v1
Journal article

High-performance evanescently-coupled uni-traveling-carrier photodiodes

  • 1. Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083 (China)

Description

A new evanescently-coupled uni-traveling-carrier photodiode (EC-UTC PD) based on a multimode diluted waveguide (MDW) structure is fabricated, analysed and characterized. Optical and electrical characteristics of the device are investigated. The excellent characteristics are demonstrated such as a responsivity of 0.36 A/W, a bandwidth of 11.5 GHz and a small-signal 1-dB compression current greater than 18 mA at 10 GHz. The saturation current is significantly improved compared with those of similar evanescently-coupled pin photodiodes. The radio frequency (RF) bandwidth can be further improved by eliminating RF losses induced by the cables, the probe and the bias tee between the photodiode and the spectrum analyzer

Availability note (English)

Available from http://dx.doi.org/10.1088/1674-1056/18/6/046

Additional details

Identifiers

Publishing Information

Journal Title
Chinese Physics. B
Journal Volume
18
Journal Issue
6
Journal Page Range
p. 2393-2397
ISSN
1674-1056