Influence of surface roughness on layer-by-layer analysis of implanted layers

Experimental and theoretical studies of layer-by-layer elemental analysis regularities for rough surfaces were conducted, taking as an example, concentration profile configuration change of nitrogen ions implanted into silicon. It is shown, that experimental concentration profile widening at a high depth range and phon appearance verify roughness presence on surface, and roughness size affects essentially layer-by-layer analysis results. Howerever, phon deduction procedure allows to weaken essentially deformation effect of roughness on final distribution and to simulate target plane surface with a good degree of authenticity. With smaller localization of impurities spatial distribution the accuracy of profile configuration reduction increases