Published June 2004
| Version v1
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Strain in insulated buried layers obtained by He+ implantation in AlxGa1-xAs
- 1. Institute of Electronic Materials Technology, Warsaw (Poland)
- 2. Institute of Atomic Energy, Otwock-Swierk (Poland)
- 3. HASYLAB at Desy, Hamburg (Germany)
Description
no abstract available
Files
36036759.pdf
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Additional details
Publishing Information
- Imprint Title
- Annual Report 2003 of the Institute of Atomic Energy
- Imprint Pagination
- 173 p.
- Journal Page Range
- p. 95-96
- ISSN
- 1507-5478
- Report number
- INIS-PL--2005-0002
INIS
- Country of Publication
- Poland
- Country of Input or Organization
- Poland
- INIS RN
- 36036759
- Subject category
- S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
- Resource subtype / Literary indicator
- No Abstract
- Descriptors DEI
- ALUMINIUM COMPOUNDS; ARSENIDES; CHEMICAL COMPOSITION; CRYSTAL DEFECTS; GALLIUM COMPOUNDS; HELIUM IONS; ION IMPLANTATION; LAYERS; STRAINS; SYNCHROTRON RADIATION; X-RAY DIFFRACTION
- Descriptors DEC
- ARSENIC COMPOUNDS; BREMSSTRAHLUNG; CHARGED PARTICLES; COHERENT SCATTERING; CRYSTAL STRUCTURE; DIFFRACTION; ELECTROMAGNETIC RADIATION; IONS; PNICTIDES; RADIATIONS; SCATTERING
Optional Information
- Notes
- 4 figs