Effect of CoFe insertion in Co2MnSi/CoFe/n-GaAs junctions on spin injection properties
- 1. Division of Electronics for Informatics, Graduate School of Information Science and Technology, Hokkaido University, Sapporo 060-0814 (Japan)
Description
The CoFe thickness (tCoFe) dependence of spin injection efficiency was investigated for Co2MnSi/CoFe/n-GaAs junctions. The ΔVNL/I value, which is a measure of spin injection efficiency, strongly depended on tCoFe, where ΔVNL is the amplitude of a nonlocal spin-valve signal, and I is an injection current. Importantly, the maximum value of ΔVNL/I for a Co2MnSi/CoFe/n-GaAs junction was one order of magnitude higher than that for a CoFe/n-GaAs junction, indicating that a Co2MnSi electrode works as a highly polarized spin source. No clear spin signal, on the other hand, was observed for a Co2MnSi/n-GaAs junction due to diffusion of Mn atoms into the GaAs channel. Secondary ion mass spectrometry analysis indicated that the CoFe insertion effectively suppressed the diffusion of Mn into GaAs, resulting in improved spin injection properties compared with those for a Co2MnSi/n-GaAs junction
Additional details
Identifiers
- DOI
- 10.1063/1.4873720;
Publishing Information
- Journal Title
- Applied Physics Letters
- Journal Volume
- 104
- Journal Issue
- 17
- Journal Page Range
- p. 172405-172405.4
- ISSN
- 0003-6951
- CODEN
- APPLAB
INIS
- Country of Publication
- United States
- Country of Input or Organization
- International Atomic Energy Agency (IAEA)
- INIS RN
- 45088958
- Subject category
- S36: MATERIALS SCIENCE;
- Descriptors DEI
- ELECTRIC CONTACTS; GALLIUM ARSENIDES; MASS SPECTROSCOPY; SEMICONDUCTOR JUNCTIONS; SPIN
- Descriptors DEC
- ANGULAR MOMENTUM; ARSENIC COMPOUNDS; ARSENIDES; ELECTRICAL EQUIPMENT; EQUIPMENT; GALLIUM COMPOUNDS; PARTICLE PROPERTIES; PNICTIDES; SPECTROSCOPY
Optional Information
- Notes
- (c) 2014 AIP Publishing LLC