Published March 2013
| Version v1
Journal article
Pyrolysis of dimethylhydrazine for the MOVPE growth of GaN and InN monitored by in-situ quadrupole mass spectrometry
- 1. Department of Advanced Materials Science, The University of Tokyo, 5-1-5 Kashiwanoha, Kashiwa 277-8561 (Japan)
Description
The pyrolysis of dimethylhydrazine (DMHy) which is used as an alternative for ammonia in the MOVPE growth of nitrides has been investigated in a horizontal LP-MOVPE reactor using quadrupole mass spectrometry. The thermal decomposition rate is investigated with regard to the dependence on reactor pressure, gas flow rate and sampling position over the susceptor. The temperature for 50% decomposition is 400-600 C, which increases with lowering the pressure irrespective of the carrier gases. The results imply a strong dependence of pyrolysis rate on the pressure, namely higher pressures induce more efficient decomposition of DMHy (copyright 2013 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)
Availability note (English)
Available from: http://dx.doi.org/10.1002/pssc.201200671Additional details
Identifiers
Publishing Information
- Journal Title
- Physica Status Solidi. C, Current Topics in Solid State Physics (Online)
- Journal Volume
- 10
- Journal Issue
- 3
- Journal Page Range
- p. 405-408
- ISSN
- 1610-1642
Conference
- Title
- 4. international symposium on growth of III-nitrides
- Acronym
- ISGN4
- Dates
- 16-19 Jul 2012
- Place
- St. Petersburg (Russian Federation)
INIS
- Country of Publication
- Germany
- Country of Input or Organization
- Germany
- INIS RN
- 44061111
- Subject category
- S36: MATERIALS SCIENCE;
- Resource subtype / Literary indicator
- Conference
- Descriptors DEI
- CHEMICAL REACTION KINETICS; FLOW RATE; GALLIUM NITRIDES; GAS FLOW; HYDRAZINE; MASS SPECTROSCOPY; ORGANOMETALLIC COMPOUNDS; PRESSURE DEPENDENCE; PYROLYSIS; SAPPHIRE; SUBSTRATES; SURFACES; TEMPERATURE RANGE 0400-1000 K; THIN FILMS; VAPOR PHASE EPITAXY
- Descriptors DEC
- CHEMICAL REACTIONS; CORUNDUM; CRYSTAL GROWTH METHODS; DECOMPOSITION; EPITAXY; FILMS; FLUID FLOW; GALLIUM COMPOUNDS; KINETICS; MINERALS; NITRIDES; NITROGEN COMPOUNDS; ORGANIC COMPOUNDS; OXIDE MINERALS; PNICTIDES; REACTION KINETICS; SPECTROSCOPY; TEMPERATURE RANGE; THERMOCHEMICAL PROCESSES
Optional Information
- Notes
- With 6 figs., 1 tab., 11 refs.