Diffusion of boron implanted into silicon irradiated by high-energy argon ions

The diffusion of 100 keV boron ions implanted into Si irradiated by high-energy (46,3 MeV) Ar ions is investigated. Ar+ ion implantation is shown to result in a 12 mkm surface defective layer where there is a 'plato' at the depth of 5 mkm and then defect concentration growth with the depth was seen. The absence of defect influence on the impurity re-distribution indicates the possible use of high-energy ion doping together with ion implantation at ordinary energies of ion beams within one technological cycle. 3 refs.; 3 figs