Published October 2014
| Version v1
Miscellaneous
Radiation- stimulated adsorption of n-hexane on the surface of silicon
Description
Full text : This paper presents the results of studies of radiation-stimulated adsorption of n-hexane on a silicon surface, obtained by infrared reflection-absorption spectroscopy method. It has been used a monocrystal silicon plate with high reflectance coefficient of the surface. Irradiation of the samples was carried out on gamma-quantum source of 60Co
Availability note (English)
Available in abstract form only, full text is entered in this recordAdditional details
Publishing Information
- Publisher
- Azerbaijan National Academy of Sciences, Baku Azerbaijan
- Imprint Place
- Baku (Azerbaijan)
- Imprint Title
- The seventh eurasian conference on nuclear science and its application. Book of abstracts
- Imprint Pagination
- 415 p.
- Journal Page Range
- p. 213-214
- Report number
- INIS-AZ--0005
Conference
- Title
- 7. eurasian conference on nuclear science and its application
- Dates
- 21-24 Oct 2014
- Place
- Baku (Azerbaijan)
INIS
- Country of Publication
- Azerbaijan
- Country of Input or Organization
- Azerbaijan
- INIS RN
- 46058259
- Subject category
- S36: MATERIALS SCIENCE;
- Resource subtype / Literary indicator
- Conference, Non-conventional Literature, Numerical Data
- Descriptors DEI
- ABSORPTION SPECTROSCOPY; ADSORPTION; CHEMICAL ANALYSIS; DATA ANALYSIS; ENVIRONMENTAL EFFECTS; GAMMA RADIATION; HEXANE; HYDROCARBONS; NUMERICAL DATA; QUANTUM EFFICIENCY; QUANTUM GROUPS; RADIATION CHEMISTRY; RADIATION DOSES; SAMPLE PREPARATION; SILICON; SPECIFIC SURFACE AREA
- Descriptors DEC
- ALKANES; CHEMISTRY; DATA; DATA PROCESSING; DOSES; EFFICIENCY; ELECTROMAGNETIC RADIATION; ELEMENTS; HYDROCARBONS; INFORMATION; IONIZING RADIATIONS; ORGANIC COMPOUNDS; PHYSICAL PROPERTIES; PROCESSING; RADIATIONS; SEMIMETALS; SORPTION; SPECTROSCOPY; SYMMETRY GROUPS
Optional Information
- Notes
- 1 fig
- Funding organization
- Azerbaijan National Academy of Sciences, Baku (Azerbaijan)