Isothermal annealing of silicon implanted with 50 keV 10B ions

Isothermal annealing characteristics of silicon implanted with boron were measured and compared with calculated results. Implantation was performed with 50 keV 10B ions in the dose range of 7.5 x 1012 cm-2 to 2.0 x 1015 cm-2. Annealing temperatures ranged from 700 to 900 0C. Maximum annealing time was 104 minutes. Annealing time strongly increases with increasing dose and decreasing temperature. Assuming that there is only one activation energy the isothermal annealing curves of constant dose and different temperatures were combined to a reduced annealing curve and the reduced isothermal annealing curve calculated. Starting from first order kinetics, considering the doping profile of boron in silicon and assuming a depth-dependent decay constant the experimentally determined annealing curves could be easily described over the total dose and time range