Published February 15, 2005 | Version v1
Journal article

Current-induced chain migration in semiconductor polymer blends

  • 1. ISIS, Rutherford Appleton Laboratory, Chilton, Didcot OX11 0QX (United Kingdom)
  • 2. H.C. Starck GmbH, Werk Leverkusen, D-51368 Leverkusen (Germany)
  • 3. CDT Limited, Madingley Road, Cambridge CB3 0TX (United Kingdom)
  • 4. Department of Physics and Astronomy, University of Sheffield, Hounsfield Road, Sheffield S3 7RH (United Kingdom)

Description

We have used the technique of neutron reflectometry in order to evaluate the changes that occur within polymer light-emitting devices as they are operated. The devices examined consisted of an indium-tin-oxide, anode, a deuterated-poly(styrene sulfonate)/poly(3,4 ethylenedioxythiophene) (d-PSS/PEDT), charge injection layer, poly(fluorene) (F8), and a low work-function cathode. We found clear evidence for segregation of d-PSS to the d-PSS:PEDT/F8 interface in a device driven until its brightness had fallen to 10% of its initial value. We suggest that this effect is due to Joule heating of the device during operation

Additional details

Identifiers

Publishing Information

Journal Title
Physical Review. B, Condensed Matter and Materials Physics
Journal Volume
71
Journal Issue
8
Journal Page Range
p. 081308-081308.4
ISSN
1098-0121

Optional Information

Notes
(c) 2005 The American Physical Society