Published April 24, 2014 | Version v1
Journal article

Synthesis, morphology and optical properties of GaN and AlGaN semiconductor nanostructures

  • 1. Crystal Growth Centre, Anna University, Chennai-600025 (India)

Description

Hexagonal Gallium Nitride (GaN) and Aluminum Gallium Nitride (AlGaN) nanoparticles were synthesized by sol-gel method using Ethylene Diamine Tetra Acetic acid (EDTA) complex route. Powder X-ray diffraction (PXRD) analysis confirms the hexagonal wurtzite structure of GaN and Al0.25Ga0.75N nanoparticles. Surface morphology and elemental analysis were carried out by Scanning Electron Microscope (SEM) and Energy Dispersive X-ray spectroscopy (EDX). The room temperature Photoluminescence (PL) study shows the near band edge emission for GaN at 3.35 eV and at 3.59 eV for AlGaN nanoparticles. The Aluminum (Al) composition of 20% has been obtained from PL emission around 345 nm

Additional details

Identifiers

Publishing Information

Journal Title
AIP Conference Proceedings
Journal Volume
1591
Journal Issue
1
Journal Page Range
p. 1437-1439
ISSN
0094-243X
CODEN
APCPCS

Conference

Title
58. DAE solid state physics symposium 2013
Dates
17-21 Dec 2013
Place
Patiala, Punjab (India)

Optional Information

Notes
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