C and N depth profiles of SiCN layers determined with nuclear reaction analyses and AES

Si1CxNy layers were prepared by sequential implantation of 40 keV 13C- and 50 keV 15N-ions into c-Si left angle 111 right angle samples near RT. The carbon and nitrogen depth distributions were measured using the resonant nuclear (p,γ) reactions 15N(p,αγ)12C at Eres = 429 keV and 13C(p,γ)14N at Eres = 1748 keV, respectively. The measured raw data of depth profiling (gamma yield versus the proton beam energy) are converted to concentration-depth profiles of the elements C, N and Si with a common depth scale by using a new developed computer algorithm. These concentration profiles are compared with those obtained with Auger electron spectroscopy (AES) and non-Rutherford backscattering spectrometry (n-RBS). (orig.)