Quasi-elastic light scattering in the near infrared range caused by photoexcited electron-hole plasma induced in the layer Ga As at the presence of quantum dots In As

It is stated that a high sensitivity technique is developed to register spectra of inelastic light scattering due to electrons in the near IR-range induced by a high stability super-mode continuous laser with 1064.4 nm wave length. The use of the technique for the first time permits to register the quasi-elastic light scattering by photoexcited electron-hole plasma induced in a Ga As layer at the presence of a self-organizing ensemble of In As quantum dots. A considerable resonance amplification of quasi-elastic electron scattering intensity is revealed. The basic scattering mechanism associated with mutual electron-hole diffusion is determined