Published August 11, 1978 | Version v1
Journal article Metadata-only

Acceptor properties of sulfur in CeO2 and TiO2 semiconductor compounds

Creators

  • 1. Donetskij Gosudarstvennyj Univ. (Ukrainian SSR)

Description

On the basis of the experimental results obtained earlier on titanium and cerium oxidation the calculation is made of free electrons for CeO2 and TiO2 semiconductor compounds, doped with sulfur. The obtained dependence of electric conductivity from the degree of doping testifies to the fact that sulfur may act as an acceptor in oxides with oxygen vacancies

Additional details

Additional titles

Original title (Russian)
Акцепторные свойства серы в полупроводниковых соединениях CeO

Publishing Information

Journal Title
Dokl. Akad. Nauk SSSR
Journal Volume
241
Journal Issue
5
Series
Dokl. Akad. Nauk SSSR.
Journal Page Range
1070-1072
ISSN
0002-3264

INIS

Country of Publication
Russian Federation
Country of Input or Organization
USSR
INIS RN
10438851
Subject category
S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
Descriptors DEI
CERIUM OXIDES; ELECTRIC CONDUCTIVITY; ELECTRON DENSITY; N-TYPE CONDUCTORS; SULFUR ADDITIONS; VACANCIES; VERY HIGH TEMPERATURE
Descriptors DEC
CERIUM COMPOUNDS; CHALCOGENIDES; CRYSTAL DEFECTS; CRYSTAL STRUCTURE; ELECTRICAL PROPERTIES; OXIDES; OXYGEN COMPOUNDS; PHYSICAL PROPERTIES; POINT DEFECTS; RARE EARTH COMPOUNDS; SEMICONDUCTOR MATERIALS