Development of an integrated response generator for Si/CdTe semiconductor Compton cameras
Creators
- 1. Department of Physics, Graduate School of Science, University of Tokyo, Hongo 7-3-1, Bunkyo 113-0033 (Japan)
- 2. Department of High Energy Astrophysics, Institute of Space and Astronautical Science (ISAS), Japan Aerospace Exploration Agency (JAXA), 3-1-1 Yoshinodai, Sagamihara 229-8510 (Japan)
- 3. Department of Space and Astronautical Science, The Graduate University for Advanced Studies, 3-1-1 Yoshinodai, Sagamihara 229-8510 (Japan)
Description
We have developed an integrated response generator based on Monte Carlo simulation for Compton cameras composed of silicon (Si) and cadmium telluride (CdTe) semiconductor detectors. In order to construct an accurate detector response function, the simulation is required to include a comprehensive treatment of the semiconductor detector devices and the data processing system in addition to simulating particle tracking. Although CdTe is an excellent semiconductor material for detection of soft gamma rays, its ineffective charge transport property distorts its spectral response. We investigated the response of CdTe pad detectors in the simulation and present our initial results here. We also performed the full simulation of prototypes of Si/CdTe semiconductor Compton cameras and report on the reproducibility of detection efficiencies and angular resolutions of the cameras, both of which are essential performance parameters of astrophysical instruments.
Availability note (English)
Available from http://dx.doi.org/10.1016/j.nima.2009.11.052Additional details
Identifiers
- DOI
- 10.1016/j.nima.2009.11.052;
- PII
- S0168-9002(09)02257-8;
Publishing Information
- Journal Title
- Nuclear Instruments and Methods in Physics Research. Section A, Accelerators, Spectrometers, Detectors and Associated Equipment
- Journal Volume
- 624
- Journal Issue
- 2
- Journal Page Range
- p. 303-309
- ISSN
- 0168-9002
- CODEN
- NIMAER
Conference
- Title
- 11. european symposium on semiconductor detectors
- Dates
- 7-11 Jun 2009
- Place
- Wildbad Kreuth (Germany)
INIS
- Country of Publication
- Netherlands
- Country of Input or Organization
- International Atomic Energy Agency (IAEA)
- INIS RN
- 42074934
- Subject category
- S46: INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND TECHNOLOGY;
- Resource subtype / Literary indicator
- Conference
- Descriptors DEI
- CADMIUM; CADMIUM TELLURIDES; CAMERAS; CDTE SEMICONDUCTOR DETECTORS; CHARGE TRANSPORT; COMPTON EFFECT; COMPUTERIZED SIMULATION; DETECTION; EFFICIENCY; GAMMA RADIATION; MONTE CARLO METHOD; RESOLUTION; RESPONSE FUNCTIONS; SEMICONDUCTOR MATERIALS; SILICON; SPECTRAL RESPONSE
- Descriptors DEC
- BASIC INTERACTIONS; CADMIUM COMPOUNDS; CALCULATION METHODS; CHALCOGENIDES; ELASTIC SCATTERING; ELECTROMAGNETIC INTERACTIONS; ELECTROMAGNETIC RADIATION; ELEMENTS; FUNCTIONS; INTERACTIONS; IONIZING RADIATIONS; MATERIALS; MEASURING INSTRUMENTS; METALS; RADIATION DETECTORS; RADIATIONS; SCATTERING; SEMICONDUCTOR DETECTORS; SEMIMETALS; SIMULATION; TELLURIDES; TELLURIUM COMPOUNDS
Optional Information
- Copyright
- Copyright (c) 2009 Elsevier Science B.V., Amsterdam, The Netherlands, All rights reserved.