Published March 1991
| Version v1
Journal article
Selective epitaxial growth of YBaCuO thin films and its application to MOS-FET fabrication
- 1. Central Research Lab., Sumitomo Co., Ltd. (Japan)
- 2. Osaka Univ. (Japan). Faculty of Engineering
Description
This paper examines the feasibility of the selective (001)-Y1Ba2Cu3Ox epitaxy. The authors obtain the selective growth of epitaxial Y1Ba2Cu3Ox and heteroepitaxial (100)-MgO/(001)-Y1Ba2Cu3Ox layers through the SiO window. The MOS-capacitors and MOS-FETs were fabricated in the same way
Additional details
Publishing Information
- Journal Title
- IEEE Transactions on Magnetics
- Journal Volume
- 27
- Journal Issue
- 2
- Series
- IEEE Trans. Magn.
- Journal Page Range
- 1441-1444
- ISSN
- 0018-9464
- CODEN
- IEMGA
Conference
- Title
- 1990 applied superconductivity conference.
- Dates
- 24-28 Sep 1990.
- Place
- Snowmass, CO (United States).
INIS
- Country of Publication
- United States
- Country of Input or Organization
- United States
- INIS RN
- 23034306
- Subject category
- S36: MATERIALS SCIENCE; S42: ENGINEERING;
- Resource subtype / Literary indicator
- Conference
- Descriptors DEI
- BARIUM OXIDES; CAPACITORS; COPPER OXIDES; EPITAXY; FABRICATION; MAGNESIUM OXIDES; MOSFET; SILICON OXIDES; THIN FILMS; YTTRIUM OXIDES
- Descriptors DEC
- ALKALINE EARTH METAL COMPOUNDS; BARIUM COMPOUNDS; CHALCOGENIDES; COPPER COMPOUNDS; CRYSTAL GROWTH METHODS; ELECTRICAL EQUIPMENT; ENERGY STORAGE SYSTEMS; EQUIPMENT; FIELD EFFECT TRANSISTORS; FILMS; MAGNESIUM COMPOUNDS; MOS TRANSISTORS; OXIDES; OXYGEN COMPOUNDS; SEMICONDUCTOR DEVICES; SILICON COMPOUNDS; TRANSISTORS; TRANSITION ELEMENT COMPOUNDS; YTTRIUM COMPOUNDS
Optional Information
- Secondary number(s)
- CONF-900944--.