Electrical properties of EuO,90Sm0,10O films on silicon substrate

The films of rare earth oxides Eu0.90Sm0.10O on silicon substrate are prepared and their electric properties are studied. The films were prepared by the method of thermal evaporation in the ligature vacuum of the Eu0.90Sm0.10 composition with the following oxidation. Film thickness is 200-300 am. Magnetic susceptibility x was measured for the above films of the Eu0.90Sm0.10O composition on the silicon substrate by the method of escape of generator oscillation frequency when the sample is placed inside the coil of the resonance circuit which permit to estimate the value of the actual part of complex magnetic susceptibility