Atomic layer deposition of strontium titanate using TDMAT and AbsoluteSr

Atomic layer deposition (ALD) is a well-known technique used for binary systems in industry. Ternary oxides are desirable for high-k-dielectrics und resistive switching memories. Here we present preliminary studies on deposition of SrTiO3 as a model system for ternary oxides. The used precursors in the ALD system are TDMAT, AbsoluteSr and H2O. At this we have succeeded optimized TiO2 layers in a temperature range from 323 K up to a maximum temperature of 593 K, whereby the purge time for a deposition at 593 K has to be a little higher. At time we are going to optimize SrO layers. Because of the TDMAT temperature limit and the fact that AbsoluteSr is only reactive from 573 K, the precursors merely overlap in this range. Febrication of SrTiO3 may be facilitated by using StarTi as a precursor since it has an ALD window with temperatures better comparable to AbsoluteSr.