Published December 2, 2002 | Version v1
Journal article

The properties of nanocomposite aluminium-silicon based thin films deposited by filtered arc deposition

Description

Thin films of aluminium silicon oxynitride have been deposited on conducting (100) silicon wafers by filtered arc deposition (FAD) under nitrogen and/or oxygen gas flow. The influence of the N2/O2 flow ratio on the crystal structure, optical and mechanical properties has been investigated. The results of X-ray diffraction showed that the film structure comprised of an AlN crystallite with amorphous Si3N4 and SiOx. The optical properties over the range of 350-800 nm were measured using spectroscopic ellipsometry and found to be strongly dependent on N2/O2 flow ratio. The refractive index values of the films were measured to be in the range of 2.2-1.64 at a wavelength of 670 nm for oxygen flow range of 0-100%. The hardness of the films was found to be strongly dependent on the oxygen content in the film. The hardness range of the films was between 10 and 22 GPa and for the stress between 0.3 and 1.2 GPa

Additional details

Identifiers

PII
S0040609002006600;

Publishing Information

Journal Title
Thin Solid Films
Journal Volume
420-421
Journal Issue
3
Journal Page Range
p. 83-88
ISSN
0040-6090
CODEN
THSFAP

Optional Information

Copyright
Copyright (c) 2002 Elsevier Science B.V., Amsterdam, The Netherlands, All rights reserved.