Published May 1990
| Version v1
Journal article
Depth distribution of impurity under high dose ion implantation with stable phase formation
Creators
Description
A model of the dopant depth profile formation during a high dose ion implantation is proposed. The model envisages the formation of a stable phase by means of a chemical reaction of the dopant and matrix atoms. The model is applied for the case of oxide formation during the oxygen implantation into silicon
Additional details
Additional titles
- Original title (Russian)
- Глубинное распределение примеси при высокодозной ионной имплантации с образованием устойчивой фазы
Publishing Information
- Journal Title
- Poverkhnost': Fizika, Khimiya, Mekhanika
- Journal Issue
- no.5
- Series
- Poverkhn.: Fiz., Khim., Mekh.
- CODEN
- PFKMD
INIS
- Country of Publication
- USSR
- Country of Input or Organization
- USSR
- INIS RN
- 22002713
- Subject category
- S36: MATERIALS SCIENCE;
- Descriptors DEI
- DOSE-RESPONSE RELATIONSHIPS; ION IMPLANTATION; KEV RANGE 10-100; MIGRATION LENGTH; OXIDATION; OXYGEN IONS; PHASE STUDIES; RADIATION EFFECTS; SILICON
- Descriptors DEC
- CHARGED PARTICLES; CHEMICAL REACTIONS; ELEMENTS; ENERGY RANGE; IONS; KEV RANGE; SEMIMETALS