Published March 15, 2004
| Version v1
Journal article
The revolution in SiGe: impact on device electronics
Description
SiGe is having a major impact in device electronics. The most mature application is the SiGe BiCMOS technology which is in production throughout the world. The areas of most rapid growth are in CMOS where SiGe is being considered for a wide variety of elements including raised S/D, poly-SiGe Gates, in buffer layers to create a tensile strained Si layer, and as the conducting channel in MODFETs
Additional details
Identifiers
- DOI
- 10.1016/j.apsusc.2003.08.086;
- PII
- S0169433203010481;
Publishing Information
- Journal Title
- Applied Surface Science
- Journal Volume
- 224
- Journal Issue
- 1-4
- Journal Page Range
- p. 9-17
- ISSN
- 0169-4332
- CODEN
- ASUSEE
Conference
- Title
- 1. international SiGe technology and device meeting - From materials and process technology to device and circuit technology
- Acronym
- ISTDM 2003
- Dates
- 15-17 Jan 2003
- Place
- Nagoya (Japan)
INIS
- Country of Publication
- Netherlands
- Country of Input or Organization
- International Atomic Energy Agency (IAEA)
- INIS RN
- 38091707
- Subject category
- S46: INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND TECHNOLOGY; S36: MATERIALS SCIENCE;
- Resource subtype / Literary indicator
- Conference
- Descriptors DEI
- EQUIPMENT; GERMANIUM SILICIDES; INTEGRATED CIRCUITS; LAYERS; SEMICONDUCTOR MATERIALS; TRANSISTORS
- Descriptors DEC
- ELECTRONIC CIRCUITS; GERMANIUM COMPOUNDS; MATERIALS; MICROELECTRONIC CIRCUITS; SEMICONDUCTOR DEVICES; SILICIDES; SILICON COMPOUNDS
Optional Information
- Copyright
- Copyright (c) 2003 Elsevier Science B.V., Amsterdam, The Netherlands, All rights reserved.