Characteristics of silicon-based BaxSr1-xTiO3 thin films prepared by a sol-gel method

Silicon-based BaxSr1-xTiO3 (BST) thin films have been prepared by a sol-gel method with rapid thermal annealing (RTA) processes. Phase structure of the films has been investigated by x-ray diffraction. Atomic force microscopy studies reveal a dense and smooth surface of the sol-gel prepared films. Microstructure and electrical properties of the BST films can be affected by the substrate and the annealing process. RTA method is found to be very efficient to improve the electrical properties of the films. Dielectric constant and dielectric loss of the BST films at 100 kHz are 230 and 0.02, respectively. Leakage current density of the BST capacitors is 1.6x10-7A cm-2 at 3 V. (author)