Published May 28, 2014 | Version v1
Journal article Metadata-only

Novel signal inversion of laser beam induced current for femtosecond-laser-drilling-induced junction on vacancy-doped p-type HgCdTe

Creators

  • 1. College of Photoelectric Science and Engineering, National University of Defense Technology, Changsha, Hunan 410073 (China)
  • 2. Science and Technology on Electro-Optical Information Security Control Laboratory, Hebei 065201 (China)
  • 3. State Key Laboratory of High Performance Computing, National University of Defense Technology, Changsha, Hunan 410073 (China)

Description

In this paper, experimental results of temperature-dependent signal inversion of laser beam induced current (LBIC) for femtosecond-laser-drilling-induced junction on vacancy-doped p-type HgCdTe are reported. LBIC characterization shows that the traps induced by femtosecond laser drilling are sensitive to temperature. Theoretical models for trap-related p-n junction transformation are proposed and demonstrated using numerical simulations. The simulations are in good agreement with the experimental results. The effects of traps and mixed conduction are possibly the main reasons that result in the novel signal inversion of LBIC microscope at room temperature. The research results provide a theoretical guide for practical applications of large-scale array HgCdTe infrared photovoltaic detectors formed by femtosecond laser drilling, which may act as a potential new method for fabricating HgCdTe photodiodes.

Additional details

Identifiers

DOI
10.1063/1.4879316;

Publishing Information

Journal Title
Journal of Applied Physics
Journal Volume
115
Journal Issue
20
Journal Page Range
p. 204506-204506.5
ISSN
0021-8979
CODEN
JAPIAU

INIS

Country of Publication
United States
Country of Input or Organization
International Atomic Energy Agency (IAEA)
INIS RN
46010527
Subject category
S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
Descriptors DEI
CADMIUM ALLOYS; COMPUTERIZED SIMULATION; CURRENTS; DOPED MATERIALS; LASER DRILLING; LASER RADIATION; MERCURY ALLOYS; MICROSCOPES; PHOTODIODES; PHOTOVOLTAIC EFFECT; P-N JUNCTIONS; P-TYPE CONDUCTORS; TELLURIUM ALLOYS; TEMPERATURE DEPENDENCE; TEMPERATURE RANGE 0273-0400 K; TRANSFORMATIONS; VACANCIES
Descriptors DEC
ALLOYS; CRYSTAL DEFECTS; CRYSTAL STRUCTURE; ELECTROMAGNETIC RADIATION; MACHINING; MATERIALS; MATERIALS DRILLING; PHOTOELECTRIC EFFECT; POINT DEFECTS; RADIATIONS; SEMICONDUCTOR DEVICES; SEMICONDUCTOR DIODES; SEMICONDUCTOR JUNCTIONS; SEMICONDUCTOR MATERIALS; SIMULATION; TEMPERATURE RANGE

Optional Information

Notes
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