Published March 1, 1989 | Version v1
Journal article Metadata-only

Radiation damage effects on imaging charge coupled devices

Creators

  • 1. Brunel Univ., Uxbridge (UK). Dept. of Physics

Description

Results of investigations into the effects of ionizing radiation on the performance of two dimensional charge coupled devices are described in detail. (orig.)

Additional details

Publishing Information

Journal Title
Nuclear Instruments and Methods in Physics Research, Section A
Journal Volume
275
Journal Issue
3
Series
Nucl. Instrum. Methods Phys. Res., Sect. A.
Journal Page Range
545-557
ISSN
0168-9002
CODEN
NIMAE

Conference

Title
International workshop on silicon pixel detectors for particles and X-rays.
Dates
31 May - 2 Jun 1988.
Place
Louvain (Belgium).

INIS

Country of Publication
Netherlands
Country of Input or Organization
Netherlands
INIS RN
20035127
Subject category
S46: INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND TECHNOLOGY;
Resource subtype / Literary indicator
Conference
Descriptors DEI
ANNEALING; CHARGE-COUPLED DEVICES; LOW TEMPERATURE; MEDIUM TEMPERATURE; MOSFET; PHYSICAL RADIATION EFFECTS; TEMPERATURE DEPENDENCE; ULTRAVIOLET RADIATION
Descriptors DEC
ELECTROMAGNETIC RADIATION; FIELD EFFECT TRANSISTORS; HEAT TREATMENTS; MOS TRANSISTORS; RADIATION EFFECTS; RADIATIONS; SEMICONDUCTOR DEVICES; TRANSISTORS