Controllable piezoelectricity of Pb(Zr0.2Ti0.8)O3 film via in situ misfit strain
Creators
- 1. Gwangju Institute of Science and Technology (Korea, Republic of). School of Materials Science and Engineering
- 2. Martin Luther University of Halle-Wittenberg, Halle (Germany). Institute for Physics
- 3. Oak Ridge National Laboratory (ORNL), Oak Ridge, TN (United States). Quantum Condensed Matter Division
Description
In this paper, the tetragonality (c/a) of a PbZr0.2Ti0.8O3 (PZT) thin film on La0.7Sr0.3MnO3/0.72Pb(Mg1/3Nb2/3)O3-0.28PbTiO3 (PMN-PT) substrates was controlled by applying an electric field on the PMN-PT substrate. The piezoelectric response of the PZT thin film under various biaxial strains was observed using time-resolved micro X-ray diffraction. The longitudinal piezoelectric coefficient (d33) was reduced from 29.5 to 14.9 pm/V when the c/a ratio of the PZT film slightly changed from 1.051 to 1.056. Finally, our results demonstrate that the tetragonality of the PZT thin film plays a critical role in determining d33, and in situ strain engineering using electromechanical substrate is useful in excluding the extrinsic effect resulting from the variation in the film thickness or the interface between substrate.
Availability note (English)
Available from http://www.osti.gov/pages/biblio/1340448; DOE Accepted Manuscript full text, or the publishers Best Available Version will be available free of charge after the embargo periodAdditional details
Additional titles
- Augmented title (English)
- KEYWORDS: PZT FILMS; PIEZOELECTRIC FIELDS; PIEZOELECTRIC TRANSDUCERS; FERROELECTRIC THIN FILMS; THIN FILM STRUCTURE
Identifiers
Publishing Information
- Journal Title
- Applied Physics Letters
- Journal Volume
- 110
- Journal Issue
- 3
- Journal Page Range
- vp.
- ISSN
- 0003-6951
INIS
- Country of Publication
- United States
- Country of Input or Organization
- United States
- INIS RN
- 48060565
- Subject category
- S71: CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS;
- Descriptors DEI
- ELECTRIC FIELDS; FERROELECTRIC MATERIALS; PIEZOELECTRICITY; PZT; STRAINS; SUBSTRATES; THIN FILMS; TIME RESOLUTION; X-RAY DIFFRACTION
- Descriptors DEC
- COHERENT SCATTERING; DIELECTRIC MATERIALS; DIFFRACTION; ELECTRICITY; FILMS; LEAD COMPOUNDS; MATERIALS; OXYGEN COMPOUNDS; RESOLUTION; SCATTERING; TIMING PROPERTIES; TITANATES; TITANIUM COMPOUNDS; TRANSITION ELEMENT COMPOUNDS; ZIRCONATES; ZIRCONIUM COMPOUNDS
Optional Information
- Contract/Grant/Project number
- AC05-00OR22725; NRF-2014R1A1A3053111; SFB 762
- Funding organization
- USDOE Laboratory Directed Research and Development (LDRD) Program (United States); National Research Foundation of Korea (NRF) (Korea, Republic of); Gwangju Institute of Science and Technology (Korea, Republic of); POSCO TJ Park Foundation (Korea, Republic of); Deutsche Forschungsgemeinschaft (DFG) (Germany)
- Secondary number(s)
- OSTIID--1340448