Published June 1994 | Version v1
Journal article Metadata-only

Experimental study on the double barrier structure at room temperature

Creators

  • 1. Centre for Optoelectronics, Dept. of Electrical Engineering, National Univ. of Singapore (Singapore)

Description

An experimental study of AlAs / GaAs / AlAs double barrier structure is carried out. The double barrier and quantum well structure are grown by MBE. The peak-to-valley ratio 2.6 : 1 with peak current density of 1.6 kA/cm/sup 2 at room temperature have been achieved. (authors)

Additional details

Publishing Information

Journal Title
Singapore Journal of Physics
Journal Volume
10
Journal Issue
1
Journal Page Range
p. 53-57
ISSN
0217-4251

INIS

Country of Publication
Singapore
Country of Input or Organization
Singapore
INIS RN
42104335
Subject category
S77: NANOSCIENCE AND NANOTECHNOLOGY;
Descriptors DEI
FABRICATION; HETEROJUNCTIONS; MOLECULAR BEAM EPITAXY; SEMICONDUCTOR DIODES; TRANSISTORS
Descriptors DEC
CRYSTAL GROWTH METHODS; EPITAXY; SEMICONDUCTOR DEVICES; SEMICONDUCTOR JUNCTIONS