Fast response UV detection based on waveguide characteristics of vertically grown ZnO nanorods partially embedded in anodic alumina template
Creators
- 1. Academy of Scientific and Innovative Research (AcSIR), CSIR-National Physical Laboratory, Dr K. S. Krishnan Marg, New Delhi 110012 (India)
- 2. Electrical and Electronics Metrology Division, CSIR-National Physical Laboratory, Dr K. S. Krishnan Marg, New Delhi 110012 (India)
Description
Zinc oxide (ZnO)-based ultraviolet (UV) detector has been fabricated and its photoresponse is studied in an out-of-plane contact configuration. Porous anodic aluminum oxide (AAO) template-based deposition method is adopted for the aligned and well-separated growth of ZnO nanorods (NRs). Through-hole in silicon (Si) by modified metal assisted chemical etching is used as a window for the electrochemical deposition of ZnO in the template and for out-of-plane electrical contacts during device analysis. The fabricated photodetector shows a fast response under UV (365 nm) light illumination, with rise and decay times of 31 ± 2 ms and 85 ± 3 ms, respectively. This fast response is analysed in terms of vertical growth and the waveguide nature of ZnO NRs embedded in anodic alumina. These results are further supported by a simulation comparing the electric field distribution of ZnO NR embedded in AAO with that of bare ZnO NR. (paper)
Availability note (English)
Available from http://dx.doi.org/10.1088/1361-6528/aaf545Additional details
Identifiers
Publishing Information
- Journal Title
- Nanotechnology (Print)
- Journal Volume
- 30
- Journal Issue
- 8
- Journal Page Range
- [7 p.]
- ISSN
- 0957-4484
INIS
- Country of Publication
- United Kingdom
- Country of Input or Organization
- International Atomic Energy Agency (IAEA)
- INIS RN
- 51044050
- Subject category
- S77: NANOSCIENCE AND NANOTECHNOLOGY;
- Descriptors DEI
- ALUMINIUM OXIDES; CONFIGURATION; CRYSTAL GROWTH; DETECTION; ELECTRIC CONTACTS; ELECTRIC FIELDS; ELECTRODEPOSITION; ETCHING; ILLUMINANCE; NANOSTRUCTURES; PHOTODETECTORS; POROUS MATERIALS; SILICON; SIMULATION; ULTRAVIOLET RADIATION; WAVEGUIDES; ZINC OXIDES
- Descriptors DEC
- ALUMINIUM COMPOUNDS; CHALCOGENIDES; DEPOSITION; ELECTRICAL EQUIPMENT; ELECTROLYSIS; ELECTROMAGNETIC RADIATION; ELEMENTS; EQUIPMENT; LYSIS; MATERIALS; OXIDES; OXYGEN COMPOUNDS; RADIATIONS; SEMIMETALS; SURFACE COATING; SURFACE FINISHING; ZINC COMPOUNDS