First principles total energy studies of the adsorption of germane on Ge(001)-c(2 x 4)
- 1. Instituto de Fisica, Universidad Autonoma de Puebla, Apartado Postal J-48, Puebla 72570 (Mexico)
- 2. Centro de Ciencias de la Materia Condensada, Universidad Nacional Autonoma de Mexico, Apartado Postal 2681, Ensenada, Baja California 22800 (Mexico)
Description
We perform first principles total energy calculations to study the energetics, and the atomic structure of the adsorption of germane (GeH4) molecules on the Ge(001)-c(2 x 4) surface. The adsorption of a GeH4 unit occurs after its dissociation into a germanium trihydride (GeH3) and a hydrogen atom and a subsequent decomposition into a germanium dihydride (GeH2) subunit and H atoms. Consequently, we first consider the adsorption of GeH2 in two different configurations; the on-dimer and the intra-row geometries. Similar to the adsorption of SiH2 and GeH2 on Si(001), it is found that the on-dimer site is more stable than the intra-row geometry by 0.13 eV. However, in the adsorption of a GeH2 fragment together with two H atoms we find that the intra-row geometry is energetically more favorable, again, similar to the adsorption of SiH2 and GeH2 (plus two H atoms) on the Si(001) surface
Additional details
Identifiers
- DOI
- 10.1016/j.tsf.2005.04.053;
- PII
- S0040-6090(05)00424-4;
Publishing Information
- Journal Title
- Thin Solid Films
- Journal Volume
- 490
- Journal Issue
- 2
- Journal Page Range
- p. 196-200
- ISSN
- 0040-6090
- CODEN
- THSFAP
Conference
- Title
- Mexican Academy of Materials Science conference on solar cells and solar energy materials
- Acronym
- IMRC 2004
- Dates
- 22-26 Aug 2004
- Place
- Cancun (Mexico)
INIS
- Country of Publication
- Netherlands
- Country of Input or Organization
- International Atomic Energy Agency (IAEA)
- INIS RN
- 37023076
- Subject category
- S36: MATERIALS SCIENCE;
- Resource subtype / Literary indicator
- Conference
- Descriptors DEI
- ADSORPTION; DECOMPOSITION; DIMERS; DISSOCIATION; GEOMETRY; GERMANIUM; GERMANIUM HYDRIDES; HYDROGEN; MILLI EV RANGE; SEMICONDUCTOR MATERIALS; SURFACES
- Descriptors DEC
- CHEMICAL REACTIONS; ELEMENTS; ENERGY RANGE; GERMANIUM COMPOUNDS; HYDRIDES; HYDROGEN COMPOUNDS; MATERIALS; MATHEMATICS; METALS; NONMETALS; SORPTION
Optional Information
- Copyright
- Copyright (c) 2005 Elsevier Science B.V., Amsterdam, The Netherlands, All rights reserved.