Femtosecond and ultraviolet laser irradiation of graphitelike hexagonal boron nitride
Creators
- 1. Laser and Applications Division, Institute of Electronic Structure and Laser (IESL), Foundation for Research and Technology-Hellas (FORTH), Heraklion 71110, Crete (Greece)
- 2. Laboratoire des Proprietes Mecaniques et Thermodynamiques des Materiaux (LPMTM), Centre National de la Recherche Scientifique (CNRS), Institut Galilee, Universite Paris 13, 93430 Villetaneuse (France)
- 3. Groupe de Physique des Etats Condensee (GPEC), Centre National de la Recherche Scientifique (CNRS), Universite Marseille, 13288 Marseille (France)
- 4. Laboratoire de Physique des Lasers (LPL), Centre National de la Recherche Scientifique (CNRS), Institut Galilee, Univerite Paris 13, 93430 Villetaneuse (France)
- 5. Laboratoire d'Ingenierie des Materiaux et des Hautes Pressions (LIMHP), Centre National de la Recherche Scientifique (CNRS), Institut Galilee, Universite Paris 13, 93430 Villetaneuse (France)
Description
The effect of the femtosecond and nanosecond UV laser irradiation (below the ablation threshold) on graphitelike hexagonal boron nitride (hBN) has been studied. Experiments were carried out with the compacted powder under high vacuum at room temperature using the excimer KrF laser (248 nm). In the nanosecond operation mode, the laser-induced fluorescence spectra are found strongly modified depending on the integrated doze, which is attributed to a progressive enrichment of the surface layer by an elemental boron. A slow sample recovery after the laser irradiation has been observed. On the other hand, in the femtosecond mode, the fluorescence spectra depend on the laser fluence, and the changes are reversible: low-energy fluorescence spectra are restored immediately when the laser energy decreases. This effect can be explained by a material bleaching, which favors a bulk centers emission. The ablation threshold has been determined as 78 mJ/cm2 in the femtosecond laser operational mode
Additional details
Identifiers
- DOI
- 10.1063/1.1787909;
- arXiv
- arXiv:0804.1480v1;
Publishing Information
- Journal Title
- Journal of Applied Physics
- Journal Volume
- 96
- Journal Issue
- 8
- Journal Page Range
- p. 4483-4489
- ISSN
- 0021-8979
- CODEN
- JAPIAU
INIS
- Country of Publication
- United States
- Country of Input or Organization
- International Atomic Energy Agency (IAEA)
- INIS RN
- 36100668
- Subject category
- S36: MATERIALS SCIENCE;
- Descriptors DEI
- ABLATION; BLEACHING; BORON; BORON NITRIDES; FLUORESCENCE; FLUORESCENCE SPECTROSCOPY; IRRADIATION; KRYPTON FLUORIDE LASERS; LAYERS; POWDERS; SEMICONDUCTOR MATERIALS; SURFACES; TEMPERATURE RANGE 0273-0400 K; ULTRAVIOLET RADIATION
- Descriptors DEC
- BORON COMPOUNDS; ELECTROMAGNETIC RADIATION; ELEMENTS; EMISSION; EMISSION SPECTROSCOPY; EXCIMER LASERS; GAS LASERS; LASERS; LUMINESCENCE; MATERIALS; NITRIDES; NITROGEN COMPOUNDS; PHOTON EMISSION; PNICTIDES; RADIATIONS; SEMIMETALS; SPECTROSCOPY; TEMPERATURE RANGE
Optional Information
- Notes
- (c) 2004 American Institute of Physics