LSMO thin films with high metal–insulator transition temperature on buffered SOI substrates for uncooled microbolometers

Highlights: • SOI substrate for uncooled bolometer. • LSMO thin films on Bi₄Ti₃O₁₂/CeO₂/YSZ/SOI substrate. • The highest resistivity of metal–insulator transition is at temperature T_P above 400 K. • TCR coefficient about 3.4% K⁻¹ at 325 K. • Rotation of Bi₄Ti₃O₁₂ and LSMO films of 45° with regard to YSZ and SOI substrate. - Abstract: La_0.67Sr_0.33MnO₃ (LSMO) thin films have been grown by a pulsed laser deposition (PLD) on Bi₄Ti₃O₁₂(BTO)/CeO₂/YSZ buffered silicon-on-insulator (SOI) substrates. We compare the properties of these films with results of other authors. We analyse structural properties of LSMO/BTO/CeO₂/YSZ/SOI multilayer structure prepared using PLD. Electrical measurements have shown that the temperature corresponding to maximum of resistance derivative (operating temperature of a microbolometer) is about 330 K (well above room temperature) and the highest resistivity of metal–insulator transition is at temperature (T_P) above 400 K. Temperature coefficient of the resistance (TCR) has achieved values of 3.4% K⁻¹ at 325 K for some LSMO films. Transmission electron microscopy analysis has confirmed epitaxial growth of all the layers and showed a mosaic character of the LSMO films due to strain relaxation