Published August 1998
| Version v1
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Investigation of elements contamination and analysis of electrical effect of this contamination in silicon on the neutron transmutation doping in the RSG-GAS
Creators
- 1. Multipurpose Reactor Center, National Atomic Energy Agency, Serpong (Indonesia)
Description
The elements of the contamination on the Neutron Transmutation Doping Process (NTD) have investigated by Multi Channel Analyser (MCA). This Investigation is important to know the quality of silicon doping in NTD. We have found that Mn-45, Ga-72 and Au-198 are elements of contamination in silicon after NTD process. Analysis of electrical effect of this elements contamination on semiconductor silicon is described also in this paper
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33052471.pdf
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Additional details
Additional titles
- Original title (Indonesian)
- Penelitian unsur-unsur kontaminasi dan analisis efek kelistrikannya di dalam silikon pada NTD di RSG-GAS
Publishing Information
- Publisher
- Multipurpose Reactor Center, National Atomic Energy Agency
- Imprint Place
- Serpong (Indonesia)
- Imprint Title
- Proceeding of the Seminar of Research Result of Multipurpose Reactor Center Year of 1997/1998
- Imprint Pagination
- 351 p.
- Journal Page Range
- p. 40-51
- ISSN
- 0854-5278
- Report number
- INIS-ID--016
Conference
- Title
- Seminar of Research Result of Multipurpose Reactor Center Year of 1997/1998
- Original Conference Title
- Seminar Hasil Penelitian PRSG Tahun 1997/1998
- Dates
- 9-10 Jun 1998
- Place
- Serpong (Indonesia)
INIS
- Country of Publication
- Indonesia
- Country of Input or Organization
- Indonesia
- INIS RN
- 33052471
- Subject category
- S36: MATERIALS SCIENCE;
- Resource subtype / Literary indicator
- Conference
- Descriptors DEI
- ELECTRIC CONDUCTIVITY; IMPURITIES; MULTI-CHANNEL ANALYZERS; SILICON; TRANSMUTATION
- Descriptors DEC
- ELECTRICAL PROPERTIES; ELECTRONIC EQUIPMENT; ELEMENTS; EQUIPMENT; PHYSICAL PROPERTIES; PULSE ANALYZERS; SEMIMETALS
Optional Information
- Notes
- author; 7 refs.; 5 figs.