Effect of Pb-doping on the morphology, structural and optical properties of ZnO nanowires synthesized via modified thermal evaporation
Creators
- 1. Beijing National Center for Electron Microscopy, State Key Laboratory of New Ceramics and Fine Processing, Department of Material Science and Engineering, Tsinghua University, Beijing 100084 (China)
- 2. Beijing National Center for Electron Microscopy, The State Key Laboratory of New Ceramics and Fine Processing, Department of Material Science and Engineering, Tsinghua University, Beijing 100084 (China)
Description
Pb-doped ZnO nanowires (NWs) have been synthesized by modified thermal evaporation method. Effect of Pb-doping on the morphology, structure, and optical properties of as deposited NWs have been investigated. The TEM images show that the doped NWs consist of cantilever-like with diameter in the range of 20-150 nm. It has been found that the doped NWs are single crystalline grown along [1 0 1] direction. The composition and valence state of Pb ions have been investigated through energy dispersive spectroscopy (EDS) and X-ray photospectroscopy (XPS), which demonstrate that the Pb ions are uniformly doped into each NW and are in +2 oxidation state. In addition, photoluminescence spectra exhibit an increased amount of defects with increasing Pb, which leads to a red shift in the UV region. Furthermore, the band gap tailoring in Pb-doped ZnO NWs makes their potential for optoelectronics devices.
Availability note (English)
Available from http://dx.doi.org/10.1016/j.mseb.2010.03.039Additional details
Identifiers
- DOI
- 10.1016/j.mseb.2010.03.039;
- PII
- S0921-5107(10)00194-7;
Publishing Information
- Journal Title
- Materials Science and Engineering. B, Solid-State Materials for Advanced Technology
- Journal Volume
- 174
- Journal Issue
- 1-3
- Journal Page Range
- p. 55-58
- ISSN
- 0921-5107
- CODEN
- MSBTEK
Conference
- Title
- 18. international materials research congress: Symposium on advances in semiconducting materials
- Acronym
- IMRC 2009
- Dates
- 16-20 Aug 2009
- Place
- Cancun (Mexico)
INIS
- Country of Publication
- Netherlands
- Country of Input or Organization
- International Atomic Energy Agency (IAEA)
- INIS RN
- 43030434
- Subject category
- S36: MATERIALS SCIENCE;
- Resource subtype / Literary indicator
- Conference
- Descriptors DEI
- DEFECTS; DOPED MATERIALS; EVAPORATION; IMAGES; LEAD IONS; MONOCRYSTALS; MORPHOLOGY; OPTICAL PROPERTIES; PHOTOLUMINESCENCE; QUANTUM WIRES; RED SHIFT; SPECTRA; TRANSMISSION ELECTRON MICROSCOPY; X RADIATION; X-RAY PHOTOELECTRON SPECTROSCOPY; ZINC OXIDES
- Descriptors DEC
- CHALCOGENIDES; CHARGED PARTICLES; CRYSTALS; ELECTROMAGNETIC RADIATION; ELECTRON MICROSCOPY; ELECTRON SPECTROSCOPY; EMISSION; IONIZING RADIATIONS; IONS; LUMINESCENCE; MATERIALS; MICROSCOPY; NANOSTRUCTURES; OXIDES; OXYGEN COMPOUNDS; PHASE TRANSFORMATIONS; PHOTOELECTRON SPECTROSCOPY; PHOTON EMISSION; PHYSICAL PROPERTIES; RADIATIONS; SPECTROSCOPY; ZINC COMPOUNDS
Optional Information
- Copyright
- Copyright (c) 2010 Elsevier Science B.V., Amsterdam, The Netherlands, All rights reserved.