Published December 1987
| Version v1
Journal article
Scattering by a random field of elastic deformations in neutron-bombarded GaAs
Description
The contribution to electron scattering due to a random field of elastic deformations produced by defects in GaAs caused by neutron irradiation is calculated. Under the assumption of smallness of the radius of correlation of the random field and the parameter values used earlier to interpret the optical absorption spectrum, the influence of this scattering mechanism on the mobility is estimated
Additional details
Publishing Information
- Journal Title
- Sov. Phys. J. (Engl. Transl.)
- Journal Volume
- 30
- Journal Issue
- 6
- Series
- Sov. Phys. J. (Engl. Transl.).
- Journal Page Range
- 488-490
- ISSN
- 0038-5697
- CODEN
- SOPJA
INIS
- Country of Publication
- United States
- Country of Input or Organization
- United States
- INIS RN
- 19082383
- Subject category
- S36: MATERIALS SCIENCE; S36: MATERIALS SCIENCE; S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
- Resource subtype / Literary indicator
- Translation
- Descriptors DEI
- ATTENUATION; CRYSTAL DEFECTS; CRYSTAL MODELS; DEFORMATION; ELASTICITY; ELECTRON MOBILITY; ELECTRONS; GALLIUM ARSENIDES; IRRADIATION; NEUTRONS; PHYSICAL RADIATION EFFECTS; SCATTERING
- Descriptors DEC
- ARSENIC COMPOUNDS; ARSENIDES; BARYONS; CRYSTAL STRUCTURE; ELEMENTARY PARTICLES; FERMIONS; GALLIUM COMPOUNDS; HADRONS; LEPTONS; MATHEMATICAL MODELS; MECHANICAL PROPERTIES; MOBILITY; NUCLEONS; PARTICLE MOBILITY; RADIATION EFFECTS
Optional Information
- Notes
- Translated from Izv. Vyssh. Uchebon. Zaved., Fiz.; 30, No. 6, 51-53(Jun 1987).