High performance silicon solar cells using low dose phosphorus implants

A new high performance solar cell structure, the MINP solar cell, has been developed, combining the better features of p-n junction and MIS technologies. Voltages in wafers implanted with 20 keV phosphorus ions at dose rates of 1013/cm2 have reached 661 mV (AM0, 250C), the highest reported for an implanted cell. The dose rates required are more than 200 times lower than those required for optimum performance of p-n junction cells and translate to a massive increase in implanter throughput. (orig.)