Published September 1974
| Version v1
Journal article
L-shaped Josephson tunnel device
Creators
Description
The base electrode is L-shaped so that the horizontal leg of the L is used for the tunnel junction area. Located over the base electrode is the oxide tunnel barrier. The counter electrode is deposited over the tunnel barrier, and a control line overlapping the entire Josephson structure is in the direction of the counter electrode. Because the base electrode is L-shaped, thick insulation need not be provided between it and control line. Since the counter electrode does not contain In, it is easy to provide a thick native oxide on it. Thus, the tunnel device is totally insulated from the control line. The gain curve for this configuration is the same as for the true ''in-line'' gate
Additional details
Publishing Information
- Journal Title
- IBM Tech. Disclosure Bull.
- Journal Volume
- 17
- Journal Issue
- 4
- Series
- IBM Tech. Disclosure Bull.
- Journal Page Range
- 1203
INIS
- Country of Publication
- United States
- Country of Input or Organization
- United States
- INIS RN
- 7251938
- Subject category
- S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
- Resource subtype / Literary indicator
- No Abstract
- Descriptors DEI
- FABRICATION; JOSEPHSON JUNCTIONS; PERFORMANCE; SPECIFICATIONS; TUNNEL EFFECT
- Descriptors DEC
- SEMICONDUCTOR JUNCTIONS
Optional Information
- Notes
- Published in Summary Form Only.