Published September 1974 | Version v1
Journal article

L-shaped Josephson tunnel device

Description

The base electrode is L-shaped so that the horizontal leg of the L is used for the tunnel junction area. Located over the base electrode is the oxide tunnel barrier. The counter electrode is deposited over the tunnel barrier, and a control line overlapping the entire Josephson structure is in the direction of the counter electrode. Because the base electrode is L-shaped, thick insulation need not be provided between it and control line. Since the counter electrode does not contain In, it is easy to provide a thick native oxide on it. Thus, the tunnel device is totally insulated from the control line. The gain curve for this configuration is the same as for the true ''in-line'' gate

Additional details

Publishing Information

Journal Title
IBM Tech. Disclosure Bull.
Journal Volume
17
Journal Issue
4
Series
IBM Tech. Disclosure Bull.
Journal Page Range
1203

INIS

Country of Publication
United States
Country of Input or Organization
United States
INIS RN
7251938
Subject category
S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
Resource subtype / Literary indicator
No Abstract
Descriptors DEI
FABRICATION; JOSEPHSON JUNCTIONS; PERFORMANCE; SPECIFICATIONS; TUNNEL EFFECT
Descriptors DEC
SEMICONDUCTOR JUNCTIONS

Optional Information

Notes
Published in Summary Form Only.