Published July 1980
| Version v1
Journal article
Improvement of crystalline quality of epitaxial silicon-on-sapphire by ion implantation and furnace regrowth
Description
It is shown that monoenergetic (<400 KeV), low-temperature Si implants, at any angle of incidence to the Si surface, can be used to achieve the best reported crystal quality of <0.5 μm thick Si in SOS, regrown at temperatures below 5750C. (author)
Additional details
Publishing Information
- Journal Title
- Solid-State Electron.
- Journal Volume
- 23
- Journal Issue
- 7
- Series
- Solid-State Electron.
- Journal Page Range
- 803-806
- ISSN
- 0038-1101
INIS
- Country of Publication
- United Kingdom
- Country of Input or Organization
- United Kingdom
- INIS RN
- 12577434
- Subject category
- S36: MATERIALS SCIENCE;
- Descriptors DEI
- ANNEALING; ION IMPLANTATION; KEV RANGE 100-1000; SAPPHIRE; SILICON; VAPOR DEPOSITED COATINGS
- Descriptors DEC
- ALUMINIUM COMPOUNDS; ALUMINIUM OXIDES; CHALCOGENIDES; COATINGS; CORUNDUM; ELEMENTS; ENERGY RANGE; HEAT TREATMENTS; KEV RANGE; MINERALS; OXIDES; OXYGEN COMPOUNDS; SEMIMETALS