Published April 1973
| Version v1
Journal article
Radiation-induced defect in subsurface silicon layers
Creators
Description
no abstract available
Additional details
Additional titles
- Original title (Russian)
- Радиационные повреждения в приповерхностных слоях кремния
Publishing Information
- Journal Title
- Fiz. Tekh. Poluprovodn.
- Journal Volume
- 7
- Journal Issue
- 4
- Series
- Fiz. Tekh. Poluprovodn.
- Journal Page Range
- 835-836
INIS
- Country of Publication
- USSR
- Country of Input or Organization
- USSR
- INIS RN
- 4083579
- Subject category
- S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
- Resource subtype / Literary indicator
- No Abstract
- Descriptors DEI
- BORON IONS; ELECTRONS; IRRADIATION; KEV RANGE 10-100; KEV RANGE 100-1000; LAYERS; LOW TEMPERATURE; N-TYPE CONDUCTORS; NEUTRONS; P-TYPE CONDUCTORS; PHOSPHORUS IONS; POINT DEFECTS; RADIATION EFFECTS; SILICON; SILICON OXIDES; SOFT X RADIATION; SURFACES
- Descriptors DEC
- BARYONS; CHALCOGENIDES; CHARGED PARTICLES; CRYSTAL DEFECTS; CRYSTAL STRUCTURE; ELECTROMAGNETIC RADIATION; ELEMENTARY PARTICLES; ELEMENTS; ENERGY RANGE; FERMIONS; HADRONS; IONS; KEV RANGE; LEPTONS; NUCLEONS; OXIDES; RADIATIONS; SEMICONDUCTOR MATERIALS; SEMIMETALS; SILICON COMPOUNDS; X RADIATION
Optional Information
- Notes
- Published in summary form only; for English translation see the journal Sov. Phys. - Semicond.