Modification of Schottky barrier height by surface grain boundaries of polycrystalline silicon

It is found that the Schottky barrier height phi/sub B/n depends on the grain-boundary surface state density D/sub B/S and the boundary density d/sub B/, which is defined as the length of grain boundary on the surface per unit area (inversely proportional to the average grain size). Experimental data for Au--polycrystalline-Si (n type) Schottky diodes indicate that the effective grain-boundary state density is approximately 3 x 1011 cm-1 eV-1 and the change of barrier height is consistent with the proposed model