Published January 1984
| Version v1
Journal article
Influence of VV centers in silicon on its photothermally stimulated exoelectron emission
Creators
- 1. Polytechnic Institute, Riga
Description
Irradiation of Si by 75 keV boron cations at 10-6 Torr vacuum is studied by ESR and photothermally stimulated exoelectrons emission
Additional details
Publishing Information
- Journal Title
- Sov. Phys. - Semicond. (Engl. Transl.)
- Journal Volume
- 18
- Journal Issue
- 1
- Series
- Sov. Phys. - Semicond. (Engl. Transl.).
- Journal Page Range
- 104-104
- ISSN
- 0038-5700
INIS
- Country of Publication
- United States
- Country of Input or Organization
- United States
- INIS RN
- 16005956
- Subject category
- S36: MATERIALS SCIENCE;
- Descriptors DEI
- ANNEALING; BORON IONS; CATIONS; ELECTRON EMISSION; ELECTRON SPIN RESONANCE; EXOELECTRONS; HIGH VACUUM; KEV RANGE 10-100; LOW TEMPERATURE; MECHANICAL POLISHING; MEDIUM TEMPERATURE; MONOCRYSTALS; PHYSICAL RADIATION EFFECTS; SILICON; V CENTERS
- Descriptors DEC
- ATOMIC IONS; CHARGED PARTICLES; COLOR CENTERS; CRYSTAL DEFECTS; CRYSTAL STRUCTURE; CRYSTALS; ELECTRONS; ELEMENTARY PARTICLES; ELEMENTS; EMISSION; ENERGY RANGE; FERMIONS; HEAT TREATMENTS; IONS; KEV RANGE; LEPTONS; MAGNETIC RESONANCE; POINT DEFECTS; POLISHING; RADIATION EFFECTS; RESONANCE; SEMIMETALS; SURFACE FINISHING; VACANCIES
Optional Information
- Notes
- Cover-to-cover translation of Fizika i Tekhnika Poluprovodnikov (USSR).