Published May 1, 2021 | Version v1
Journal article

The influence of confined acoustic phonon on the Quantum Ettingshausen effect in cylindrical quantum wire with an infinite potential in presence of strong electromagnetic wave

  • 1. Institute of Applied Technology, Thu Dau Mot University, No. 06 Tran Van On, Thu Dau Mot, Binh Duong (Viet Nam)
  • 2. Department of Theoretical Physics, Faculty of Physics, VNU University of Science, No. 334 Nguyen Trai, Hanoi (Viet Nam)
  • 3. Department of Technical Physics, Faculty of Natural Science and Technology, Hanoi Metropolitan University, No. 98 Duong Quang Ham, Hanoi (Viet Nam)

Description

Based on the quantum kinetic equation method, the quantum Ettingshausen effect has been theoretically studied under the influence of confined acoustic phonon in a cylindrical quantum wire (CQW) with infinite potential in the presence of a strong electromagnetic wave. We considered a quantum wire in the presence of a constant electric field, a magnetic field, an electromagnetic wave (EMW) with an assumption that electron – confined acoustic phonon (CAP) scattering is essential. Analytical results obtained show that the EC depends on the amplitude and the frequency of the EMW in a non-linear way. Besides, the impact of phonon confinement on the above effect characterized by m-quantum number in the expression of the EC. The theoretical results have been numerically calculated for the GaAS/AlGaAs cylindrical quantum wire model. The obtained results show that the phonon confinement contributes to the EC quantitatively and qualitatively. On the other hand m is set to zero, the result obtained is similar to the case of unconfined phonon. Furthermore, by considering the quantum size effect, the values of the EC increases, the position of the magnetic-phonon resonance peak changes, and the number of peak resonant peak increases while the radius of quantum wire declines. These obtained results are different from bulk semiconductor and unconfined phonon case which donates to the theory of the Ettingshausen effect in low-dimensional semiconductor systems. (paper)

Availability note (English)

Available from http://dx.doi.org/10.1088/1742-6596/1932/1/012008

Additional details

Publishing Information

Journal Title
Journal of Physics. Conference Series (Online)
Journal Volume
1932
Journal Issue
1
Journal Page Range
[12 p.]
ISSN
1742-6596

Conference

Title
45. Vietnam Conference on Theoretical Physics
Acronym
VCTP-45
Dates
12-14 Oct 2020
Place
Vinh Yen (Viet Nam)