Published 2004
| Version v1
Miscellaneous
On dose dependences of electrophysical and photoelectric parameters of HgCdTe crystals implanted by the borine ions
Creators
- 1. Drogobych Pedagogical University, Drogobych (Ukraine)
- 2. Institute of Applied Problem of Mechanics and Mathematics, NASU, Lvov (Ukraine)
Description
no abstract available
Additional details
Publishing Information
- Imprint Title
- Abstracts of 5. International Symposium Ion Implantation and Other Applications of Ions and Electrons, ION 2004
- Imprint Pagination
- 257 p.
- Journal Page Range
- p. 153
Conference
- Title
- 5. International Symposium Ion Implantation and Other Applications of Ions and Electrons, ION 2004
- Dates
- 14-17 Jun 2004
- Place
- Kazimierz Dolny (Poland)
INIS
- Country of Publication
- Poland
- Country of Input or Organization
- Poland
- INIS RN
- 36060131
- Subject category
- S36: MATERIALS SCIENCE; S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
- Resource subtype / Literary indicator
- No Abstract, Conference, Non-conventional Literature
- Descriptors DEI
- BORON IONS; CADMIUM COMPOUNDS; CARRIER MOBILITY; CHEMICAL COMPOSITION; CRYSTAL DEFECTS; CRYSTALS; DEPTH; DOSE-RESPONSE RELATIONSHIPS; ELECTRIC CONDUCTIVITY; ETCHING; HALL EFFECT; ION IMPLANTATION; MERCURY COMPOUNDS; PHOTOELECTRIC EFFECT; PHYSICAL RADIATION EFFECTS; RECOMBINATION; SPATIAL DISTRIBUTION; TELLURIDES
- Descriptors DEC
- CHALCOGENIDES; CHARGED PARTICLES; CRYSTAL STRUCTURE; DIMENSIONS; DISTRIBUTION; ELECTRICAL PROPERTIES; IONS; MOBILITY; PHYSICAL PROPERTIES; RADIATION EFFECTS; SURFACE FINISHING; TELLURIUM COMPOUNDS
Optional Information
- Notes
- 1 ref.