Published 1995 | Version v1
Book

Sheath expansion in two-dimensional cartesian and cylindrical targets

  • 1. Univ. of Wisconsin, Madison, WI (United States). Plasma Source Ion Implantation Lab.

Description

The transient sheath expansion induced by a voltage pulse applied to two-dimensional targets is simulated numerically with a fluid model. Non-linear sheath expansion due to sheath overlapping in a small cylindrical bore with a finite depth is presented. The sheath expansion inside the bore is enhanced by the initially nonuniform plasma distribution. The angular distribution of the ions impinging on the target surface and the nonuniformity of the incident ion dose are calculated for a cylindrical bore target. A dip of the dose profile, seen earlier for square targets, appears at convex corners of the target. This dip is a numerical artifact, not a real physical phenomenon, mainly caused by false diffusion (numerical diffusion) and inaccurate estimation of the electric field on the corner. By re-orientation of the numerical mesh to suppress false diffusion, the dip effect can be eliminated effectively in the square target case

Additional details

Publishing Information

Publisher
Institute of Electrical and Electronics Engineers, Inc.
Imprint Place
New York, NY (United States)
ISBN
0-7803-2669-5
Imprint Title
IEEE conference record -- abstracts: 1995 IEEE international conference on plasma science
Imprint Pagination
312 p.
Journal Page Range
p. 204-205.

Conference

Title
22. international conference on plasma science.
Dates
5-8 Jun 1995.
Place
Madison, WI (United States).

INIS

Country of Publication
United States
Country of Input or Organization
United States
INIS RN
27030024
Subject category
S71: CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS; S36: MATERIALS SCIENCE; S36: MATERIALS SCIENCE;
Resource subtype / Literary indicator
Conference
Descriptors DEI
ION IMPLANTATION; MATERIALS; NONLINEAR PROBLEMS; PLASMA EXPANSION; PLASMA SHEATH; PLASMA SIMULATION
Descriptors DEC
EXPANSION; SIMULATION

Optional Information

Secondary number(s)
CONF-950612--.