Behavior of silicon and gallium nitride devices under electrical overstress conditions

Published 2017 | Version v1

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Availability note (English)

Available from Vienna University of Technology Library, Resselgasse 4, 1040 Vienna (AT) and available from https://permalink.obvsg.at/AC14535201

Country of Publication: Austria
Country of Input or Organization: Austria
INIS RN: 51007257
Subject category: S36: MATERIALS SCIENCE;
Resource subtype / Literary indicator: Thesis, Non-conventional Literature
Descriptors DEI: BREAKDOWN; ELECTRON MOBILITY; GALLIUM; GALLIUM NITRIDES; GERMANIUM; INTEGRATED CIRCUITS; REFRACTIVE INDEX; SILICON; STRESSES; THERMAL DIFFUSIVITY; TRANSISTORS
Descriptors DEC: ELECTRONIC CIRCUITS; ELEMENTS; GALLIUM COMPOUNDS; METALS; MICROELECTRONIC CIRCUITS; MOBILITY; NITRIDES; NITROGEN COMPOUNDS; OPTICAL PROPERTIES; PARTICLE MOBILITY; PHYSICAL PROPERTIES; PNICTIDES; SEMICONDUCTOR DEVICES; SEMIMETALS; THERMODYNAMIC PROPERTIES