Published April 1995
| Version v1
Journal article
Determination of impurity Ge in silicon crystal by SRXRF using fundamental parameter method
Creators
- 1. Academia Sinica, Beijing, BJ (China). Inst. of High Energy Physics
Description
The concentration of impurity Ge on the cross section of silicon crystal was determined by synchrotron radiation-excited X-ray fluorescence analysis using a fundamental parameter method. The accuracy of the program was ascertained by analyzing standard samples. The relative error is less than 12%
Additional details
Publishing Information
- Journal Title
- Nuclear Techniques
- Journal Volume
- 18
- Journal Issue
- 4
- Journal Page Range
- p. 224-226.
- ISSN
- 0253-3219
- CODEN
- NUTEDL
INIS
- Country of Publication
- China
- Country of Input or Organization
- China
- INIS RN
- 26065373
- Subject category
- S37: INORGANIC, ORGANIC, PHYSICAL AND ANALYTICAL CHEMISTRY;
- Descriptors DEI
- ACCURACY; CALCULATION METHODS; CONCENTRATION RATIO; DATA COVARIANCES; GERMANIUM; MONOCRYSTALS; PARAMETRIC ANALYSIS; SILICON; SYNCHROTRON RADIATION SOURCES; X-RAY FLUORESCENCE ANALYSIS
- Descriptors DEC
- CHEMICAL ANALYSIS; CRYSTALS; ELEMENTS; METALS; NONDESTRUCTIVE ANALYSIS; RADIATION SOURCES; SEMIMETALS; X-RAY EMISSION ANALYSIS