Published November 2009 | Version v1
Report Metadata-only

Study on semiconductor device process by high energy ion implantation

Creators

  • 1. S.H.I. Examination and Inspection, Ltd., Saijo, Ehime (Japan)
  • 2. Sanken Electoric Co., Ltd., Niiza, Saitama (Japan)

Description

no abstract available

Part of:
JAEA-Tokai tandem annual report 2008. April 1, 2008 - March 31, 2009

Additional details

Publishing Information

Imprint Title
JAEA-Tokai tandem annual report 2008. April 1, 2008 - March 31, 2009
Imprint Pagination
186 p.
Journal Page Range
p. 105-106
Report number
JAEA-Review--2009-036

INIS

Country of Publication
Japan
Country of Input or Organization
Japan
INIS RN
41118875
Subject category
S36: MATERIALS SCIENCE;
Resource subtype / Literary indicator
No Abstract
Descriptors DEI
BORON IONS; ION IMPLANTATION; PHOSPHORUS; PHYSICAL RADIATION EFFECTS; P-N JUNCTIONS; SCANNING ELECTRON MICROSCOPY; SEMICONDUCTOR DEVICES; SEMICONDUCTOR JUNCTIONS; SILICON; TANDEM ELECTROSTATIC ACCELERATORS
Descriptors DEC
ACCELERATORS; CHARGED PARTICLES; ELECTRON MICROSCOPY; ELECTROSTATIC ACCELERATORS; ELEMENTS; IONS; MICROSCOPY; NONMETALS; RADIATION EFFECTS; SEMICONDUCTOR JUNCTIONS; SEMIMETALS

Optional Information

Notes
3 refs., 2 figs.