Application of Rutherford ion backscattering to study on phosphorus implantation into gallium arsenide

The technique for data processing on consequent implantation of high and superhigh ion doses into solids by the light ion backscattering method in channeling regime has been developed. The allowances are made both for the change of the matrix atom concentration in a near surface layer and for the change of the stopping power of the implanted media. The consideration for the stopping power allows one to escape rough errors in determining the interstitial ion profile and 100% error in determining the defect profile. The technique developed has been applied by the analysis of the defect type in phosphorus- ion-implanted GaAs crystals (energy 200 keV, dose 1x1016 ion/cm2, temperature 77 K). It is established that dislocations are prevailed in the implanted layer; stacking faults cavities and bubble inclusions are dominated in the annealed crystals