Published 2017
| Version v1
Book
In-plane ferroelectric properties of highly oriented ferroelectric thin films
Creators
- 1. CSIR-National Physical Laboratory, Dr K.S. Krishnan Marg, New Delhi 110012 (India)
- 2. AcSIR, CSIR-National Physical Laboratory, Dr. K. S. Krishnan Marg, New Delhi-110012 (India)
Description
In-plane ferroelectric polarization of (Pb0.6Li0.2Bi0.2)(Zr0.2Ti0.8)O3 (PLBZT) thin film has been studied over a wide range of frequencies. A highly oriented PLBZT thin film was grown on LaAlO3 (LAO) substrate by pulsed laser deposition system which illustrates well-saturated polarization. We have employed in-plane configurations for polarization characterization which demonstrates alignment of dipoles along the direction of applied electric field (in-plane). Capacitance-Voltage and Ferroelectric measurement show prominent in-plane ferroelectric properties which may provide an extra degree of freedom for in-plane device miniaturization in the area of microelectronics. (author)
Additional details
Publishing Information
- Publisher
- CSIR-National Physical Laboratory
- Imprint Place
- New Delhi (India)
- Imprint Title
- Proceedings of the seventeenth international conference on thin films: abstracts
- Imprint Pagination
- 236 p.
- Journal Page Range
- p. 119
Conference
- Title
- 17. international conference on thin films
- Acronym
- ICTF-2017
- Dates
- 13-17 Nov 2017
- Place
- New Delhi (India)
INIS
- Country of Publication
- India
- Country of Input or Organization
- India
- INIS RN
- 52048117
- Subject category
- S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
- Resource subtype / Literary indicator
- Conference
- Descriptors DEI
- COATINGS; DEPOSITION; FERROELECTRIC MATERIALS; LEAD OXIDES; MICROELECTRONICS; SUBSTRATES; THIN FILMS; ZIRCONIUM OXIDES
- Descriptors DEC
- CHALCOGENIDES; DIELECTRIC MATERIALS; FILMS; LEAD COMPOUNDS; MATERIALS; OXIDES; OXYGEN COMPOUNDS; TRANSITION ELEMENT COMPOUNDS; ZIRCONIUM COMPOUNDS