Published September 21, 2015
| Version v1
Journal article
Sub-terahertz and terahertz microstrip resonant-tunneling-diode oscillators
Creators
- 1. Terahertz Imaging Research Division, Frontier Research Center, Canon Inc., 30-2, Shimomaruko 3-chome, Ohta-ku, Tokyo 146-8501 (Japan)
Description
We present a theoretical analysis of traveling-wave microstrip resonant-tunneling-diode (RTD) oscillators. Such oscillators are similar to terahertz (THz) quantum-cascade lasers (QCLs) with a metal-metal waveguide and with just the active part of a single QCL period (an RTD) as their active core. Assuming realistic parameters of RTDs, we show that the microstrip RTD oscillators should be working at sub-THz and THz frequencies. Contrary to the contemporary THz QCLs, RTD microstrips are room-temperature oscillators. The major loss- and gain-enhancement mechanisms in RTD microstrips are identified
Additional details
Identifiers
- DOI
- 10.1063/1.4931727;
Publishing Information
- Journal Title
- Applied Physics Letters
- Journal Volume
- 107
- Journal Issue
- 12
- Journal Page Range
- p. 123504-123504.5
- ISSN
- 0003-6951
- CODEN
- APPLAB
INIS
- Country of Publication
- United States
- Country of Input or Organization
- International Atomic Energy Agency (IAEA)
- INIS RN
- 47052131
- Subject category
- S71: CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS;
- Descriptors DEI
- GAIN; LASERS; LOSSES; METALS; OSCILLATORS; TEMPERATURE RANGE 0273-0400 K; TRAVELLING WAVES; TUNNEL DIODES; WAVEGUIDES
- Descriptors DEC
- AMPLIFICATION; ELECTRONIC EQUIPMENT; ELEMENTS; EQUIPMENT; SEMICONDUCTOR DEVICES; SEMICONDUCTOR DIODES; TEMPERATURE RANGE
Optional Information
- Notes
- (c) 2015 AIP Publishing LLC